High-temperature furnace bodies for semiconductor diffusion, oxidation, and thermal processing applications. Customizable to actual usage scenarios with precise temperature control and multi-stage heating.
High-temperature furnace bodies for semiconductor thermal processing. Design temperature 1200°C, operating temperature 400–1100°C. Multi-stage heating with thermocouple hole ≥7mm. Constant-temperature zone ≥2700mm, independently designed. Accuracy: 600–800°C ±1°C; 800–1100°C ±0.5°C. Heating rate: 25–800°C ≥25°C/min; 800–1100°C ≥16°C/min. Cooling rate ≥5°C/min for 800–1100°C. Inner-wall load capacity >220 kg. Case temperature ≤220°C. Furnace shell: T1.5 or T1.2mm SUS304/SUS201 stainless steel brushed plate.
InquireFurnace bodies customizable according to actual usage scenarios. Furnace wire materials: Kangtai A1, Shougang HYZ, HRE. Wire diameters: 2.5, 2.8, 3.0, 3.2mm. Contact us with your specifications for a tailored solution.
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